IMS (Insulated Metal Substrate) is a high-performance circuit carrier engineered by bonding a copper foil onto an anodized metal core via a highly thermally conductive dielectric layer. It provides rapid heat spreading, reliable electrical isolation, robust structural rigidity, and seamless integration with fully automated SMT production lines.
Product Advantages
Breakdown Voltage: 4500V/DC with leakage current below 1 mA/s, ensuring robust insulation and long‑term reliability in high‑voltage applications.
Substrate Material: Aluminum base with an insulated dielectric layer, providing both excellent mechanical support and effective electrical isolation.
Thermal Conductivity 2–18 W/m·K, tailorable through dielectric layer formulation to match specific cooling requirements.
Line Width / Spacing: Minimum precision of 30 μm, supporting high‑density interconnects and compact circuit designs.
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